We investigate electronic band structure and transport properties in bilayergraphene superlattices of Thue-Morse sequence. It is interesting to find thatthe zero-$\bar{k}$ gap center is sensitive to interlayer coupling $t'$, and thecenters of all gaps shift versus $t'$ at a linear way. Extra Dirac points mayemerge at $k_{y}\ne$0, and when the extra Dirac points are generated in pairs,the electronic conductance obeys a diffusive law, and the Fano factor tends tobe 1/3 as the order of Thue-Morse sequence increases. Our results provide aflexible and effective way to control the transport properties in graphene.
展开▼
机译：我们研究了Thue-Morse序列的双层石墨烯超晶格中的电子能带结构和传输性质。有趣的是，零-$ \ bar {k} $的间隙中心对层间耦合$ t'$敏感，并且所有间隙的中心都相对于$ t'$线性移动。额外的狄拉克点可能出现在$ k_ {y} \ ne $ 0，并且成对产生额外的狄拉克点时，电子电导服从扩散定律，并且Fano因子倾向于为Thue-Morse序列的1/3。增加。我们的结果提供了灵活有效的方法来控制石墨烯中的传输性能。
展开▼
